MFC Gas Flow Unit Converter
Convert between sccm, slm, g/min, and kg/hr for common process gases (N2, Ar, O2, H2, He) at STP conditions. Based on NIST Chemistry WebBook data.
Free, accurate tools for semiconductor process engineers. All conversions use NIST reference data and are performed at STP (Standard Temperature and Pressure).
Convert between sccm, slm, g/min, and kg/hr for common process gases (N2, Ar, O2, H2, He) at STP conditions. Based on NIST Chemistry WebBook data.
Convert between Pa, kPa, MPa, bar, mbar, atm, psi, mmHg, and Torr. Essential for vacuum systems, process control, and semiconductor equipment.
Calculate required pumping speed from flow (sccm/slm) and chamber pressure. Q = S × P. For cryo capacity, throttle analysis, and vacuum troubleshooting.
Predict chamber pumpdown curve with pump curve, conductance, and gas load (leak, permeation, outgassing). Understand base pressure and pumpdown tails.
Convert between sccm, mbar·L/s, Torr·L/s, Pa·m³/s and compute leak rate using the pressure rise (rate-of-rise) method.
Calculate molecular-flow conductance for tubes and orifices, combine components in series/parallel, and compute effective pumping speed at the chamber.
Estimate vacuum outgassing load from internal surface area and typical area-based outgassing rates, and approximate base pressure with a given effective pumping speed.
Analyze measured pumpdown logs to estimate S/V or effective pumping speed and approximate gas load using the pumpdown rate equation.
Compute gas mixture composition and partial pressures from MFC flows and total pressure, with an optional molecular-flow conductance scaling.
Calculate molecular impingement rate, monolayer formation time, and Langmuir exposure for a given pressure, temperature, and gas species.
Calculate gas mean free path (λ) from pressure and gas type. Supports Ar, N2, H2, He, Kr, Xe. For PVD, sputtering, and vacuum process design.