Technical Articles
In-depth technical content for semiconductor process engineers. Learn about gas flow units, MFC operation, and process control fundamentals.
What is sccm?
Understanding standard cubic centimeters per minute (sccm), the standard unit for volumetric gas flow in semiconductor manufacturing.
Read article →sccm to kg/hr conversion in semiconductor processes
Practical guide to converting between volumetric (sccm) and mass flow (kg/hr) units for process recipes.
Read article →Why MFC accuracy affects yield
How Mass Flow Controller precision impacts semiconductor process control and final device yield.
Read article →Vacuum unit conversion basics
Understanding Torr, mbar, Pa, and other vacuum pressure units used in CVD and etch processes.
Read article →Gas density vs molecular weight
Relationship between molecular weight and gas density at STP, and implications for flow calculations.
Read article →Vacuum conductance and effective pumping speed
How piping conductance and pump speed combine to determine the effective pumping speed seen by the chamber.
Read article →Throughput, leak rate, and the rate-of-rise method
Using throughput units and the pressure rise test (qL = V·Δp/Δt) to quantify leaks and gas loads.
Read article →Outgassing load estimation and base pressure
Estimating outgassing load from area-based outgassing rates and predicting approximate base pressure.
Read article →Pumpdown log analysis for S/V and gas load
Using measured pumpdown logs to extract S/V, effective pumping speed, and approximate gas load.
Read article →Gas mixture composition and partial pressures
Relating MFC flow settings to mole fractions and partial pressures in a non-reactive gas mixture.
Read article →Impingement rate, monolayer time, and Langmuir exposure
How pressure and gas species determine surface flux, monolayer formation times, and Langmuir exposures.
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